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Exceptionally low DC resistance and core loss
Soft saturation current rating over 70A
Exceptionally low DC resistance
High Q value, high energy storage
Flat wire construction,low DC resistance
Soft saturation, can handle high peak current
Exceptionally low DC resistance and core loss
Soft saturation current rating over 45A
Flat wire construction,low DC resistance
Vertical SMD structure, saving installation space
Flat wire construction,low DC resistance
Vertical DIP structure, saving installation space
Exceptionally low DC resistance and core loss
Soft saturation current rating over 65A
High saturation current and stable frequency characteristics
Third mounting pad for greater stability and board adhesion
Flat wire construction, good heat dissipation
Magnetically shielded to minimize EMI
Magnetic shielding structure, low core loss
Third mounting pad for greater stability and board adhesion
Magnetic shielding structure, low core loss
Through-hole (TH) mounting for rugged board attachment
Flat wire construction, low DC resistance
Magnetically shielded to minimize EMI
Small volume, high energy storage
High power output, low loss
Flat wire construction, low DC and AC resistance
Metal shield structure to minimize EMI
High saturation current load capability
Effectively reduce thermal aging
Flat wire construction with low resistance
High saturation current load capability
High saturation current load capability
Good insulation performance, low AC loss
High power output, low loss
Effectively reduce thermal aging
High power output, low loss
Metal shield structure to minimize EMI
Small volume, high energy storage
Ultra low DC resistance
Excellent DC bias capability
Shield structure, suitable for high density mounting
Small volume,excellent SRF characteristic, high energy storage
High-precision DC resistance, high current
Small volume,excellent SRF characteristic, high energy storage
High-precision DC resistance, high current
Small volume, high current, suitable for high density mounting
Combined material achieves low loss
Assemblage design, sturdy structure.
Hot dipped Sn plating provides low risk of whisker growth.
Lightweight design, high Q value, low impedance
AEC-Q200 qualified
Lightweight design, high Q value, low impedance
AEC-Q200 qualified
Lightweight design, high Q value, low impedance
AEC-Q200 qualified
Symmetrical air gap , improve saturation current capability
AEC-Q200 qualified
High performance (Isat) realized by metal dust core
Low loss realized with low DCR
High performance (Isat) realized by metal dust core
Low loss realized with low DCR
High performance (Isat) realized by metal dust core
Low loss realized with low DCR
High performance (Isat) realized by metal dust core
Low loss realized with low DCR
High performance (Isat) realized by metal dust core
Low loss realized with low DCR
2 in 1 structure, saving space
High sound quality and low distortion
Flat wire construction with low resistance
High power output, low loss
Magnetically shielded to minimize EMI
Low loss material, high power output
Small volume, high current, suitable for high density mounting
Combined material achieves low loss
Vertical 2 in 1 structure, saving space
High current, low core loss
2 in 1 structure, saving space
High sound quality and low distortion
| No. | Part No. | Type | Test Conditions | Inductance(μH) | Tolerance | DCR Typical(mΩ) | Isat(A) | Irms(A) | Working(℃) | Length | Width | Height | File |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 401 | TGJ5D18-1R0N | SMD power inductor | 100KHz/0.1V | 1 | ±20% | 18.8 | 2.7 | 3.26 | -40~125 | 5.7 | 5.7 | 1.8 |  |
| 402 | TGJ4D28-331M | SMD power inductor | 100KHz/0.1V | 330 | ±20% | 2520 | 0.23 | 0.29 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 403 | TGJ4D28-221M | SMD power inductor | 100KHz/0.1V | 220 | ±20% | 1590 | 0.28 | 0.36 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 404 | TGJ4D28-151M | SMD power inductor | 100KHz/0.1V | 150 | ±20% | 1120 | 0.33 | 0.43 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 405 | TGJ4D28-101M | SMD power inductor | 100KHz/0.1V | 100 | ±20% | 628 | 0.4 | 0.58 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 406 | TGJ4D28-820M | SMD power inductor | 100KHz/0.1V | 82 | ±20% | 558 | 0.46 | 0.61 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 407 | TGJ4D28-680M | SMD power inductor | 100KHz/0.1V | 68 | ±20% | 497 | 0.52 | 0.65 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 408 | TGJ4D28-470M | SMD power inductor | 100KHz/0.1V | 47 | ±20% | 318 | 0.6 | 0.81 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 409 | TGJ4D28-330M | SMD power inductor | 100KHz/0.1V | 33 | ±20% | 235 | 0.72 | 0.94 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 410 | TGJ4D28-220M | SMD power inductor | 100KHz/0.1V | 22 | ±20% | 147 | 0.85 | 1.19 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 411 | TGJ4D28-150M | SMD power inductor | 100KHz/0.1V | 15 | ±20% | 116 | 1 | 1.34 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 412 | TGJ4D28-100M | SMD power inductor | 100KHz/0.1V | 10 | ±20% | 76 | 1.3 | 1.66 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 413 | TGJ4D28-8R2N | SMD power inductor | 100KHz/0.1V | 8.2 | ±20% | 66.8 | 1.5 | 1.77 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 414 | TGJ4D28-6R8N | SMD power inductor | 100KHz/0.1V | 6.8 | ±20% | 49.2 | 1.65 | 2.06 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 415 | TGJ4D28-4R7N | SMD power inductor | 100KHz/0.1V | 4.7 | ±20% | 44 | 1.85 | 2.18 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 416 | TGJ4D28-3R3N | SMD power inductor | 100KHz/0.1V | 3.3 | ±20% | 29.5 | 2.2 | 2.66 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 417 | TGJ4D28-2R2N | SMD power inductor | 100KHz/0.1V | 2.2 | ±20% | 20 | 2.5 | 3.23 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 418 | TGJ4D28-1R0N | SMD power inductor | 100KHz/0.1V | 1 | ±20% | 16 | 3.5 | 3.61 | -40~125 | 4.7 | 4.7 | 2.8 | |
| 419 | TGJ4D18-221M | SMD power inductor | 100KHz/0.1V | 220 | ±20% | 2640 | 0.24 | 0.27 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 420 | TGJ4D18-151M | SMD power inductor | 100KHz/0.1V | 150 | ±20% | 1640 | 0.29 | 0.35 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 421 | TGJ4D18-101M | SMD power inductor | 100KHz/0.1V | 100 | ±20% | 1320 | 0.34 | 0.39 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 422 | TGJ4D18-820M | SMD power inductor | 100KHz/0.1V | 82 | ±20% | 960 | 0.38 | 0.45 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 423 | TGJ4D18-680M | SMD power inductor | 100KHz/0.1V | 68 | ±20% | 850 | 0.42 | 0.48 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 424 | TGJ4D18-470M | SMD power inductor | 100KHz/0.1V | 47 | ±20% | 600 | 0.5 | 0.57 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 425 | TGJ4D18-330M | SMD power inductor | 100KHz/0.1V | 33 | ±20% | 395 | 0.6 | 0.71 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 426 | TGJ4D18-220M | SMD power inductor | 100KHz/0.1V | 22 | ±20% | 279 | 0.75 | 0.84 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 427 | TGJ4D18-150M | SMD power inductor | 100KHz/0.1V | 15 | ±20% | 174 | 0.9 | 1.06 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 428 | TGJ4D18-100M | SMD power inductor | 100KHz/0.1V | 10 | ±20% | 130 | 1.15 | 1.23 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 429 | TGJ4D18-8R2N | SMD power inductor | 100KHz/0.1V | 8.2 | ±20% | 112 | 1.2 | 1.33 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 430 | TGJ4D18-6R8N | SMD power inductor | 100KHz/0.1V | 6.8 | ±20% | 100 | 1.3 | 1.4 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 431 | TGJ4D18-4R7N | SMD power inductor | 100KHz/0.1V | 4.7 | ±20% | 63 | 1.6 | 1.77 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 432 | TGJ4D18-3R0N | SMD power inductor | 100KHz/0.1V | 3 | ±20% | 47 | 2 | 2.05 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 433 | TGJ4D18-2R2N | SMD power inductor | 100KHz/0.1V | 2.2 | ±20% | 36.2 | 2.2 | 2.33 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 434 | TGJ4D18-1R2N | SMD power inductor | 100KHz/0.1V | 1.2 | ±20% | 24.7 | 2.7 | 2.83 | -40~125 | 4.7 | 4.7 | 1.8 | |
| 435 | TGJR8D43-102M | SMD power inductor | 100KHz/0.1V | 1000 | ±20% | 4000 | 0.38 | 0.29 | -40~125 | 8 | 9.5 | 4.5 | |
| 436 | TGJR8D43-821M | SMD power inductor | 100KHz/0.1V | 820 | ±20% | 2910 | 0.43 | 0.35 | -40~125 | 8 | 9.5 | 4.5 | |
| 437 | TGJR8D43-681M | SMD power inductor | 100KHz/0.1V | 680 | ±20% | 2660 | 0.47 | 0.36 | -40~125 | 8 | 9.5 | 4.5 | |
| 438 | TGJR8D43-471M | SMD power inductor | 100KHz/0.1V | 470 | ±20% | 1840 | 0.56 | 0.43 | -40~125 | 8 | 9.5 | 4.5 | |
| 439 | TGJR8D43-331M | SMD power inductor | 100KHz/0.1V | 330 | ±20% | 1180 | 0.66 | 0.54 | -40~125 | 8 | 9.5 | 4.5 | |
| 440 | TGJR8D43-221M | SMD power inductor | 100KHz/0.1V | 220 | ±20% | 815 | 0.83 | 0.65 | -40~125 | 8 | 9.5 | 4.5 | |
| 441 | TGJR8D43-151M | SMD power inductor | 100KHz/0.1V | 150 | ±20% | 610 | 0.97 | 0.75 | -40~125 | 8 | 9.5 | 4.5 | |
| 442 | TGJR8D43-101M | SMD power inductor | 100KHz/0.1V | 100 | ±20% | 385 | 1.23 | 0.95 | -40~125 | 8 | 9.5 | 4.5 | |
| 443 | TGJR8D43-820M | SMD power inductor | 100KHz/0.1V | 82 | ±20% | 294 | 1.32 | 1.09 | -40~125 | 8 | 9.5 | 4.5 | |
| 444 | TGJR8D43-680M | SMD power inductor | 100KHz/0.1V | 68 | ±20% | 266 | 1.45 | 1.14 | -40~125 | 8 | 9.5 | 4.5 | |
| 445 | TGJR8D43-470M | SMD power inductor | 100KHz/0.1V | 47 | ±20% | 165 | 1.8 | 1.45 | -40~125 | 8 | 9.5 | 4.5 | |
| 446 | TGJR8D43-330M | SMD power inductor | 100KHz/0.1V | 33 | ±20% | 116 | 2.15 | 1.73 | -40~125 | 8 | 9.5 | 4.5 | |
| 447 | TGJR8D43-220M | SMD power inductor | 100KHz/0.1V | 22 | ±20% | 94 | 2.6 | 1.92 | -40~125 | 8 | 9.5 | 4.5 | |
| 448 | TGJR8D43-150M | SMD power inductor | 100KHz/0.1V | 15 | ±20% | 55 | 3.2 | 2.51 | -40~125 | 8 | 9.5 | 4.5 | |
| 449 | TGJR8D43-100M | SMD power inductor | 100KHz/0.1V | 10 | ±20% | 44 | 3.7 | 2.81 | -40~125 | 8 | 9.5 | 4.5 | |
| 450 | TGJR8D43-8R2N | SMD power inductor | 100KHz/0.1V | 8.2 | ±20% | 33 | 4.4 | 3.24 | -40~125 | 8 | 9.5 | 4.5 | |
| 451 | TGJR8D43-6R8N | SMD power inductor | 100KHz/0.1V | 6.8 | ±20% | 26 | 4.8 | 3.66 | -40~125 | 8 | 9.5 | 4.5 | |
| 452 | TGJR8D43-4R7N | SMD power inductor | 100KHz/0.1V | 4.7 | ±20% | 23 | 5.4 | 3.89 | -40~125 | 8 | 9.5 | 4.5 | |
| 453 | TGJR8D43-3R3N | SMD power inductor | 100KHz/0.1V | 3.3 | ±20% | 12.8 | 7 | 5.21 | -40~125 | 8 | 9.5 | 4.5 | |
| 454 | TGJR8D43-2R2N | SMD power inductor | 100KHz/0.1V | 2.2 | ±20% | 10.8 | 7.5 | 5.67 | -40~125 | 8 | 9.5 | 4.5 | |
| 455 | TGJR8D43-1R0N | SMD power inductor | 100KHz/0.1V | 1 | ±20% | 7.1 | 11 | 7 | -40~125 | 8 | 9.5 | 4.5 | |
| 456 | TGJR8D28-101M | SMD power inductor | 100KHz/0.1V | 100 | ±20% | 524 | 0.9 | 0.74 | -40~125 | 8 | 9.5 | 3 | |
| 457 | TGJR8D28-820M | SMD power inductor | 100KHz/0.1V | 82 | ±20% | 432 | 1 | 0.81 | -40~125 | 8 | 9.5 | 3 | |
| 458 | TGJR8D28-680M | SMD power inductor | 100KHz/0.1V | 68 | ±20% | 343 | 1.1 | 0.91 | -40~125 | 8 | 9.5 | 3 | |
| 459 | TGJR8D28-470M | SMD power inductor | 100KHz/0.1V | 47 | ±20% | 250 | 1.32 | 1.07 | -40~125 | 8 | 9.5 | 3 | |
| 460 | TGJR8D28-330M | SMD power inductor | 100KHz/0.1V | 33 | ±20% | 176 | 1.5 | 1.28 | -40~125 | 8 | 9.5 | 3 | |
| 461 | TGJR8D28-220M | SMD power inductor | 100KHz/0.1V | 22 | ±20% | 105 | 1.9 | 1.65 | -40~125 | 8 | 9.5 | 3 | |
| 462 | TGJR8D28-150M | SMD power inductor | 100KHz/0.1V | 15 | ±20% | 84 | 2.35 | 1.85 | -40~125 | 8 | 9.5 | 3 | |
| 463 | TGJR8D28-100M | SMD power inductor | 100KHz/0.1V | 10 | ±20% | 63 | 2.7 | 2.13 | -40~125 | 8 | 9.5 | 3 | |
| 464 | TGJR8D28-8R2N | SMD power inductor | 100KHz/0.1V | 8.2 | ±20% | 41 | 3.2 | 2.64 | -40~125 | 8 | 9.5 | 3 | |
| 465 | TGJR8D28-6R8N | SMD power inductor | 100KHz/0.1V | 6.8 | ±20% | 31.5 | 3.6 | 3.02 | -40~125 | 8 | 9.5 | 3 | |
| 466 | TGJR8D28-4R7N | SMD power inductor | 100KHz/0.1V | 4.7 | ±20% | 26 | 4 | 3.32 | -40~125 | 8 | 9.5 | 3 | |
| 467 | TGJR8D28-3R3N | SMD power inductor | 100KHz/0.1V | 3.3 | ±20% | 17 | 5.3 | 4.11 | -40~125 | 8 | 9.5 | 3 | |
| 468 | TGJR8D28-2R2N | SMD power inductor | 100KHz/0.1V | 2.2 | ±20% | 14 | 6 | 4.52 | -40~125 | 8 | 9.5 | 3 | |
| 469 | TGJR8D28-1R0N | SMD power inductor | 100KHz/0.1V | 1 | ±20% | 9 | 9 | 5.64 | -40~125 | 8 | 9.5 | 3 | |
| 470 | TGIB5022-222M | SMD power inductor | 1KHz/0.25V | 2200 | ±20% | 2830 | 0.8 | 0.43 | -40~125 | 18.5 | 14 | 6.7 | |
| 471 | TGIB5022-152M | SMD power inductor | 1KHz/0.25V | 1500 | ±20% | 1900 | 0.95 | 0.53 | -40~125 | 18.5 | 14 | 6.7 | |
| 472 | TGIB5022-102M | SMD power inductor | 1KHz/0.25V | 1000 | ±20% | 1380 | 1.2 | 0.62 | -40~125 | 18.5 | 14 | 6.7 | |
| 473 | TGIB5022-821M | SMD power inductor | 1KHz/0.25V | 820 | ±20% | 1100 | 1.3 | 0.69 | -40~125 | 18.5 | 14 | 6.7 | |
| 474 | TGIB5022-681M | SMD power inductor | 1KHz/0.25V | 680 | ±20% | 950 | 1.45 | 0.75 | -40~125 | 18.5 | 14 | 6.7 | |
| 475 | TGIB5022-561M | SMD power inductor | 1KHz/0.25V | 560 | ±20% | 760 | 1.6 | 0.83 | -40~125 | 18.5 | 14 | 6.7 | |
| 476 | TGIB5022-471M | SMD power inductor | 1KHz/0.25V | 470 | ±20% | 631 | 1.75 | 0.92 | -40~125 | 18.5 | 14 | 6.7 | |
| 477 | TGIB5022-391M | SMD power inductor | 1KHz/0.25V | 390 | ±20% | 518 | 1.9 | 1.01 | -40~125 | 18.5 | 14 | 6.7 | |
| 478 | TGIB5022-331M | SMD power inductor | 1KHz/0.25V | 330 | ±20% | 453 | 2.1 | 1.08 | -40~125 | 18.5 | 14 | 6.7 | |
| 479 | TGIB5022-271M | SMD power inductor | 1KHz/0.25V | 270 | ±20% | 361 | 2.3 | 1.21 | -40~125 | 18.5 | 14 | 6.7 | |
| 480 | TGIB5022-221M | SMD power inductor | 1KHz/0.25V | 220 | ±20% | 295 | 2.5 | 1.34 | -40~125 | 18.5 | 14 | 6.7 | |
| 481 | TGIB5022-181M | SMD power inductor | 1KHz/0.25V | 180 | ±20% | 250 | 2.7 | 1.46 | -40~125 | 18.5 | 14 | 6.7 | |
| 482 | TGIB5022-151M | SMD power inductor | 1KHz/0.25V | 150 | ±20% | 204 | 3 | 1.61 | -40~125 | 18.5 | 14 | 6.7 | |
| 483 | TGIB5022-121M | SMD power inductor | 1KHz/0.25V | 120 | ±20% | 165 | 3.3 | 1.8 | -40~125 | 18.5 | 14 | 6.7 | |
| 484 | TGIB5022-101M | SMD power inductor | 1KHz/0.25V | 100 | ±20% | 145 | 3.8 | 1.92 | -40~125 | 18.5 | 14 | 6.7 | |
| 485 | TGIB5022-820M | SMD power inductor | 1KHz/0.25V | 82 | ±20% | 108 | 4.2 | 2.21 | -40~125 | 18.5 | 14 | 6.7 | |
| 486 | TGIB5022-680M | SMD power inductor | 1KHz/0.25V | 68 | ±20% | 97 | 4.6 | 2.34 | -40~125 | 18.5 | 14 | 6.7 | |
| 487 | TGIB5022-560M | SMD power inductor | 1KHz/0.25V | 56 | ±20% | 85 | 5.1 | 2.5 | -40~125 | 18.5 | 14 | 6.7 | |
| 488 | TGIB5022-470M | SMD power inductor | 1KHz/0.25V | 47 | ±20% | 73.5 | 5.5 | 2.68 | -40~125 | 18.5 | 14 | 6.7 | |
| 489 | TGIB5022-390M | SMD power inductor | 1KHz/0.25V | 39 | ±20% | 58 | 6.1 | 3.02 | -40~125 | 18.5 | 14 | 6.7 | |
| 490 | TGIB5022-330M | SMD power inductor | 1KHz/0.25V | 33 | ±20% | 51.8 | 6.5 | 3.2 | -40~125 | 18.5 | 14 | 6.7 | |
| 491 | TGIB5022-270M | SMD power inductor | 1KHz/0.25V | 27 | ±20% | 41 | 7.3 | 3.59 | -40~125 | 18.5 | 14 | 6.7 | |
| 492 | TGIB5022-220M | SMD power inductor | 1KHz/0.25V | 22 | ±20% | 36 | 8 | 3.84 | -40~125 | 18.5 | 14 | 6.7 | |
| 493 | TGIB5022-180M | SMD power inductor | 1KHz/0.25V | 18 | ±20% | 27.8 | 8.5 | 4.37 | -40~125 | 18.5 | 14 | 6.7 | |
| 494 | TGIB5022-150M | SMD power inductor | 1KHz/0.25V | 15 | ±20% | 23.8 | 9.5 | 4.72 | -40~125 | 18.5 | 14 | 6.7 | |
| 495 | TGIB5022-120M | SMD power inductor | 1KHz/0.25V | 12 | ±20% | 22 | 10.5 | 4.91 | -40~125 | 18.5 | 14 | 6.7 | |
| 496 | TGIB5022-100M | SMD power inductor | 1KHz/0.25V | 10 | ±20% | 18 | 11.5 | 5.43 | -40~125 | 18.5 | 14 | 6.7 | |
| 497 | TGIB3340-152M | SMD power inductor | 1KHz/0.25V | 1500 | ±20% | 2350 | 1 | 0.43 | -40~125 | 13 | 9.3 | 11 | |
| 498 | TGIB3340-102M | SMD power inductor | 1KHz/0.25V | 1000 | ±20% | 1570 | 1.2 | 0.53 | -40~125 | 13 | 9.3 | 11 | |
| 499 | TGIB3340-821M | SMD power inductor | 1KHz/0.25V | 820 | ±20% | 1310 | 1.4 | 0.58 | -40~125 | 13 | 9.3 | 11 | |
| 500 | TGIB3340-681M | SMD power inductor | 1KHz/0.25V | 680 | ±20% | 1030 | 1.5 | 0.66 | -40~125 | 13 | 9.3 | 11 | |
